P U B L I C A T I O N S
since 1976The list of publications by Dr. G. A. Medvedkin consists of more than 150 titles including papers in reviewed journals, reviewed proceedings of conferences, preprints by the Ioffe Physico-Technical Institute, a monograph in Russian and Russian patents (Author’s certificates) [Refs. 3, 9-15, 31, 32, 36, 39, 51, 87], and Japanese and World patent [Ref.131], etc.
If you want to learn more about a subject for the whole period of research time, please go to the complete list. In case of specific Russian issues or limited distributions, please request the author directly to help you.
LIST OF PAPERS
by Dr. G. A. Medvedkin
1976-19841. G.A.Medvedkin, K.Ovezov, Yu.V.Rud, V.I.Sokolova, Polarization properties of CdSnP2 diodes. - Sov.Phys.Semicond. 1976, v.10, No.11, pp.1239-42.
2. I.A.Maltseva, A.Mamedov, G.A.Medvedkin, Yu.v.Rud, Optical anisotropy of ZnSiP2. - Sov.Phys.Semicond. 1977, v.11, No.11, pp.1264-6.
3. Yu.V.Rud, G.A.Medvedkin, Detector of linearly polarized radiation. - USSR Author's Certificate No.671634, 12 Aug.1977, Bull.1980, No.49, pp.291 (in Russian).
4. G.A.Medvedkin, Yu.V.Rud, Yu.A.Valov, V.I.Sokolova, Photoconductivity of p-type CdSnP2 single crystals. - Phys.Stat.Sol.(a) 1978, v.45, No.1, pp.K95-9.
5. G.A.Medvedkin, Semiconducting CdSnP2-photoreceivers aimed for Nd-laser radiation. - 4th Repub.Confer. for young physicists, Baku, 25-27 Oct. 1978, Elm 1979, p.58.
6. G.A.Medvedkin, Yu.V.Rud, Photoanalyzers of polarized radiation at UV spectral range. - All-Union Sci.-Techn. Seminar: Phase and polarization measurements of laser radiation and their metrological provision, Moscow, A.U.SRIOPI, 1978, pp.26-7 (in Russian).
7. E.S.Kalevich, S.G.Konnikov, G.A.Medvedkin, V.D.Prochukhan, Yu.V.Rud, The fabrication and some studies of II-IV-V2//II-IV-V2 heterojunctions. - 2nd All-Union Confer. "Physical processes in semiconductor heterostructures", Ashkhabad, Ylym 1978, v.II, pp.60-2 (in Russian).
8. G.A.Medvedkin, Yu.K.Undalov, Photosensitivity study of photoreceivers based on doped CdGeP2 crystals. - 3rd All-Union Confer. "Ternary semiconductors and their application", Kishinev, Shtiintsa 1979, pp.152-4 (in Russian).
9. Yu.V.Rud, G.A.Medvedkin, Yu.K.Undalov, Heterojunction photocell. - USSR Author's Certificate No.762659, 18 Oct. 1978, Bull.1981, No.48, p.305 (in Russian).
10. Yu.V.Rud, G.A.Medvedkin, Radiation detector. - USSR Author's Certificate No.805877, 2 Jan. 1979 (in Russian).
11. Yu.V.Rud, Yu.K.Undalov, G.A.Medvedkin, Analyzer of linearly polarized radiation. - USSR Author's Certificate No.812112, 3 Dec.1979, Bull.1983, No.30, pp.244 (in Russian).
12. Yu.A.Valov, G.A.Medvedkin, Yu.V.Rud, A.D.Smirnova, V.I.Sokolova, The growth method for semiconductor crystals. - USSR Author's Certificate No.915667, 15 Aug. 1979 (in Russian).
13. Yu.V.Rud, G.A.Medvedkin, Radiation analyzer. - USSR Author's Certificate No.878112, 25 Dec. 1979 (in Russian).
14. Yu.V.Rud, G.A.Medvedkin, Photoelectric analyzer. - USSR Author's Certificate No.867248, 28 Jan. 1980 (in Russian).
15. Yu.V.Rud, G.A.Medvedkin, V.E.Skoryukin, The method of photoelectric transformation of linearly polarized radiation. - USSR Author's Certificate No.969122, 22 June 1980 (in Russian).
16. G.A.Medvedkin, Yu.V.Rud, Photoelectric properties of CdSnP2-CdP2 heterojunctions. - Sov.Phys.Tech.Phys.Letters 1979, v.5, No.11, pp.576-8.
17. A.A.Vaipolin, Yu.A.Valov, R.V.Masagutova, G.A.Medvedkin, Yu.V.Rud, Polarization investigation of the photoconductivity of tetragonal ZnP2 crystals. - Sov.Phys.Semicond. 1980, v.14 (1), pp.76-9.
18. G.A.Medvedkin, Yu.V.Rud, Photoresponse anisotropy of isotropic semiconductor. - Sov.Phys.Tech.Phys.Letters 1980, v.6, No.8, pp.425-6.
19. Yu.V.Rud, R.V.Masagutova, G.A.Medvedkin, Photodetector p-n-p structure in ZnGeP2 with the photocurrent polarity controlled by the plane of polarization of incident light. - Sov.Phys.Semicond. 1980, v.14, No.10, pp.1117-20.
20. G.A.Medvedkin, Yu.V.Rud, Polarization-controlled inverter of the sign of the photocurrent in anisotropic semiconductors. - Sov.Phys.Semicond. 1980, v.14, No.14, pp.1161-4.
21. G.A.Medvedkin, V.V.Podolskii, Yu.V.Rud, Influence of an external voltage on the polarization characteristics of p-n junction made of CdSnP2. - Sov.Phys.Semicond. 1980, v.14, No.11, pp.1314-7.
22. G.A.Medvedkin, Z.A.Parimbekov, Yu.V.Rud, Polarized luminescence of CdSnP2 via deep centers. - 2nd All-Union Meeting on deep levels in semiconductors, Tashkent, Tashkent State Univ. 1980, pt.II, p.72 (in Russian).
23. V.V.Korotaev, G.A.Medvedkin, E.D.Pankov, Yu.V.Rud, Direct registration of linearly polarized radiation by Ge and Si photoreceivers. - Optical Journal (Opt.Mekh.Prom.) 1981, No.11, pp.14-6.
24. G.A.Medvedkin, Yu.V.Rud, Effect of the depth of an imbedded n-p junction on the photopleochroism spectrum of anisotropic II-IV-V2 semiconductors. - Sov.Phys.Tech.Phys. 1981, v.26, No.6, pp.744-5.
25. G.A.Medvedkin, Yu.V.Rud, The parameters of polarization photosensitivity of isotropic semiconductors. - Phys.Stat.Sol.(a) 1981, v.67, No.1, pp.333-7.
26. Yu.V.Rud, A.A.Vaipolin, E.S.Kalevich, G.A.Medvedkin, Z.A.Parimbekov, V.I.Sokolova, Anisotropy of photoactive absorption and radiative recombination of CdSnxGe1-xP2 solid solutions. - Sov.Phys.Semicond. 1981, v.15, No.12, pp.1374-8.
27. G.A.Medvedkin, The study of anisotropic photoelectric properties of tetragonal and isotropic semiconductors. - Doctoral Thesis (Kandidat of Sciences - Ph.D.), A.F.Ioffe Physico-Technical Institute, Leningrad 1981, 21 pp. (in Russian).
28. G.A.Medvedkin, Photopleochroism of diode structures based on CdSnP2 in consideration of surface recombination. - Repub.School for young scientists "Actual problems of semiconductor physics", Fergana State Pedagogical Inst., Fergana 1982, pp.75-6 (in Russian).
29. G.A.Medvedkin, Yu.V.Rud, Window-effect and photopleochroism coefficient in heterojunctions based on tetragonal II-IV-V2 semiconductors. - 3rd All-Union Confer. on physical processes in semiconducting heterojunctions, Odessa, Odessa State Univ. 1982, v.I, pp.94-5 (in Russian).
30. G.A.Medvedkin, Yu.V.Rud, V.E.Skoryukin, Increasing the efficiency of phototransdusers which use linearly polarized light. - Sov.Phys.Tech.Phys. 1982, v.27, No.12, pp.1491-2.
31. V.V.Korotaev, G.A.Medvedkin, E.D.Pankov, Yu.V.Rud, Arrangement for investigating polarization properties of anisotropic materials. - USSR Author's Certificate No.1045004, 4 Jan.1982, Bull.1983, No.36, p.150 (in Russian).
32. G.A.Medvedkin, Setup for determination of polarized radiation parameters (its variants). - USSR Author's Certificate No.1299254, 16 July 1982, Bull.1991, No.20, p.240 (in Russian).
33. G.K.Averkieva, G.A.Medvedkin, Yu.V.Rud, A.A.Yakovenko, Photoelectric properties of (p)n-CuInSe2 crystals and diode structure with p-n junction and Schottky barrier. - 4th All-Union Confer. "Ternary semiconductors and their application", Kishinev, Shtiintsa 1983, p.111 (in Russian).
34. G.A.Medvedkin, E.V.Tsvetkova, Diode structures of In-Cd1-xMnxTe. - Ibid., p.263.
35. G.A.Medvedkin, I.V.Karasev, Fabrication and photoelectric properties of thin-film ITO/CuInSe2 heterostructures. - In Coll. "Development and application of electron-beam and photoelectronic devices", Moscow, Electronika 1983, series 4, No.1(188), pp.30-2 (in Russian).
36. G.A.Medvedkin, A.A.Yakovenko, The treatment method for CuInSe2 semiconducting material. - USSR Author's Certificate No.1135391, 9 Sept.1983 (in Russian).
37. G.K.Averkieva, G.A.Medvedkin, A.A.Yakovenko, Positive crystal-field splitting in CuInSe2. - Sov.Phys.Semicond. 1983, v.17, No.11, pp.1330-2.
38. G.A.Medvedkin, Yu.V.Rud, A.A.Yakovenko, The study of oxidation processes on CuInSe2 crystal surface. - 3rd All-Union Meeting "Physics of surface phenomena in semiconductors", Kiev, Naukova Dumka 1984, v.2, p.44 (in Russian).
1985-198939. G.A.Medvedkin, R.N.Bekimbetov, A.A.Yakovenko, The method of investigation of defect crystal structure. - USSR Author's Certificate No.1321141, 10 June 1985 (in Russian).
40. G.K.Averkieva, R.N.Bekimbetov, N.N.Konstantinova, G.A.Medvedkin, V.D.Prochukhan, Preparation and physical properties of MnIn2Te4. - 2nd All-Union Confer. "Material science of chalcogenide and oxygen-containing semiconductors", Chernovtsy, Chernovtsy State Univ. 1986, v.I, p.64.
41. G.A.Medvedkin (Principal investigator), et al., Complex investigation of optical polycrystalline zinc selenide. - Contract No.1782-175/910, Report to GOI, Leningrad 1986, 81 pp. (in Russian).
42. G.A.Medvedkin, G.A.Ambrazevichius, A.A.Yakovenko, Investigation of CuInSe2 crystal oxidation process. - Surface.Phys.Chem.Mech.(GB) 1987, No.2, pp.81-7.
43. G.A.Medvedkin, R.N.Bekimbetov, T.L.Makarova, A.D.Smirnova, V.I.Sokolova, Optical properties of the thermal oxide on CuInSe2. - Sov.Phys.Tech.Phys. 1987, v.32, No.5, pp.583-6.
44. G.A.Medvedkin, Yu.V.Rud, Physical properties and an outlook of I-III-VI2 semiconductor application for solar cells. - 5th All-Union Confer. "Ternary semiconductors and their applications", Kishinev, Shtiintsa 1987, v.1, pp.34-5 (in Russian).
45. R.N.Bekimbetov, N.N.Konstantinova, G.A.Medvedkin, M.A.Tairov, Magnetic semiconductors of Mn(In,Ga)2Te4: physical study and possible applications. - Ibid., p.183.
46. R.N.Bekimbetov, G.A.Medvedkin, V.D.Prochukhan, Yu.V.Rud, M.A.Tairov, Experimental observation of an optical absorption anisotropy in MnIn2Te4 and MnGa2Te4 crystals. - Sov.Phys.Tech.Phys.Letters 1987, v.13, No.17, pp.434-5.
47. G.A.Medvedkin, Yu.V.Rud, Schottky barrier usage for studying a band structure of anisotropic semiconductors with chalcopyrite lattice. - All-Union Confer. "Physics and application of metal-semiconductor contact", Kiev, Kiev State Univ. 1987, p.115 (in Russian).
48. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Polarization photosensitivity effects in II-IV-V2 ternary semiconductors (Review). - A.F.Ioffe PTI Preprint No.1185, Leningrad 1987, 65 pp.(in Russian).
49. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov., Optical band edge absorption in CuInSe2. - Phys.Stat.Sol.(b) 1987, v.144, No.2, pp.809-16.
50. R.N.Bekimbetov, A.A.Vaipolin, N.N.Konstantinova, L.V.Kradinova, G.A.Medvedkin, V.D.Prochukhan, Yu.V.Rud, M.A.Tairov, The semiconductors of Mn-III2-Te4 family: physical properties, promising applications. - Cryst.Res.Technol. 1987, v.22, No.12, pp.K238-40.
51. G.A.Medvedkin, A.D.Smirnova, V.I.Sokolova, Growth method for single crystals of Cu2CdAIVBVI4 compounds. - USSR Author's Certificate No.1535079, 2 Nov.1987 (in Russian).
52. R.N.Bekimbetov, I.I.Karpov, G.A.Medvedkin, A.D.Smirnova, I.K.Ostrovskaya, Properties of CdS/CuInSe2 and CdSe/CuInSe2 heterojunctions fabricated by chemical deposition. - Sov.Phys.Tech.Phys. 1988, v.33, No.2, pp.214-6.
53. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Multifrequency "giant" photopleochroism. - Sov.Phys.Tech.Phys. Letters 1988, v.14, No.10, pp.398-400.
54. G.A.Medvedkin, V.D.Prochukhan, Yu.V.Rud, M.A.Tairov, Observation of linear optical dichroism in CuInTe2. - Ibid., pp.406-7.
55. T.L.Makarova, G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, The reflection and the ellipsometry of real surface of CuInS2 crystals. - Sov.Phys.Tech.Phys. 1988, v.33, No.8, pp.975-6.
56. G.A.Medvedkin, Yu.V.Rud, and M.A.Tairov, Anisotropy of optical processes in uniaxial CuInVI2 semiconductors (Review). - A.F.Ioffe PTI Preprint No.1272, Leningrad 1988, 67 pp. (in Russian).
57. G.A.Medvedkin, V.D.Prochukhan, Yu.V.Rud, M.A.Tairov, Ternary semiconductors Mn-III2-Te4: physical properties and possible applications (Review). - A.F.Ioffe PTI Preprint No.1273, Leningrad 1988, 67 pp. (in Russian).
58. M.R.-A.Magomedov, G.A.Medvedkin, I.K.Polushina, Yu.V.Rud, M.A.Tairov, Preparation of CuInSe2 thin films for solar photoconverters. - All-Union Confer. "The outlook to develop and create the united research, technical, industrial and exploitation base in Krasnodar region for using renewable energy sources", Gelenjick, Oct.1988, pp.18-9 (in Russian).
59. V.M.Andreev, L.R.Larionov, G.A.Medvedkin, K.Ya.Rasulov, V.P.Khvostikov, Liquid-phase ultra-thin (<300 Å) AlGaAs layers for solar cells. - Ibid., pp.114-5.
60. S.Martsinkevichius, G.Ambrazevichius, R.N.Bekimbetov, G.A.Medvedkin, Optical properties of MnIn2Te4 and MnGa2Te4. - Sov.Phys.Semicond. 1988, v.22, No.11, pp.1216-8.
61. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Magnetic semiconductors MnIn2Te4 and MnGa2Te4: Fundamental edge of optical absorption. - 9th All-Union Confer. on semiconductor physics, Kishinev, SCC of Moldavian SCS 1988, v.2, pp.172-3 (in Russian).
62. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Spectroscopic investigation of linear dichroism in CuInSe2 single crystals. - 8th Czechoslovak Spectroscopic Confer., Ceske Budejovice, CSS 1988, section M, p.99.
63. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Photoelectric phenomena in OMDS-structure OM/Al2O3/CdSnP2 (OM=CdO, In2O3). - In Coll. "Electrophysics of layer structures", series 6 (Materials), Moscow, Electronika 1988, No.4(280). pp.45-6 (in Russian).
64. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Fundamental optical absorption edge of CdSiAs2 single crystals. - Sov.Phys.Sol.State 1988, v.30, No.12, pp.2059-62.
65. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Fundamental optical absorption edge in MnGa2Te4 single crystals. - Phys.Stat.Sol.(a) 1988, v.110, No.2, pp.631-43.
66. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Fundamental optical absorption edge in MnIn2Te4 single crystals. - Phys.Stat.Sol.(a) 1989, v.111, No.1, pp.289-300.
67. G.A.Medvedkin, V.D.Prochukhan, Yu.V.Rud, M.A.Tairov, Anisotropy of the optical band edge absorption in CuInTe2 single crystals. - Phys.Stat.Sol.(b) 1989, v.151, No.2, pp.711-9.
68. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Edge optical absorption in CuInS2. - Optics & Spectrosc. 1989, v.66, No.1, pp.52-6.
69. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Optical dichroism of CdSnP2 crystals in the range of the fundamental absorption edge. - Sov.Phys.Sol.State 1989, v.31, No.4, pp.606-9.
70. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Photoelectric effect in In2O3/CuInSe2 heterojunctions formed by the thermal oxidation method. - Sov.Phys.Semicond. 1989, v.23, No.5, pp.544-6.
71. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Photosensitivity spectra of Cu-CdSiP2 structures. - Sov.Phys.Semicond. 1989, v.23, No.6, pp.625-7.
72. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Anisotropy of long-wavelength optical absorption in CuInTe2 single crystals. - Sov.Phys.Semicond. 1989, v.23, No.7 pp.808-9.
73. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Direct observation of valence-band crystal-field splitting in CdSiAs2. - Sol.State Commun. 1989, v.71, No.4, pp.307-9.
74. G.A.Medvedkin, Yu.V.Rud, M.Serginov, Optoelectronic anisotropy of CdSiAs2 single crystals. - Intern. Co-ordinating meeting "Optoelectronics-89", Baku, Physics Inst. of Azerb.AS 1989, p.104 (in Russian).
75. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Photoelectric anisotropy of II-IV-V2 ternary semiconductors (Review). - Phys.Stat.Sol.(a) 1989, v.115, No.1, pp.11-50.
76. N.N.Konstantinova, G.A.Medvedkin, I.K.Polushina, Yu.V.Rud, A.D.Smirnova, V.I.Sokolova, M.A.Tairov, Optical and electric properties of Cu2CdSnSe4 and Cu2CdGeSe4 crystals. - Inorganic Materials 1989, v.25, No.9, pp.1223-6.
77. M.-R.A.Magomedov, Yu.V.Rud, G.A.Medvedkin, P.P.Hohlochov, R.M.Gadjieva, A.K.Akhmedov, R.Z.Zubairuev, Electrophysical properties of CuInSe2 thin films prepared by thermal evaporation in vacuum. - In Coll. "Transport and magnetic phenomena in semiconductors and metal oxides", Makhachkala, Physics Inst. of Dagestan AS 1989, pp.65-71 (in Russian).
78. R.N.Bekimbetov, G.A.Medvedkin, V.D.Prochukhan, Yu.V.Rud, M.A.Tairov, Optical anisotropy of MnGa2Te4. - Sov.J.Physics (Izv.vuzov SSSR, Fizika) 1989, v.32, No.9, pp.101-3.
1990-1994 79. G.A.Medvedkin (Principal investigator), et al, Study of photoelectric properties of CuInSe2/In2O3-type single crystal heterostructures. - Contract No.175/108-147/127-90KD, Report to SIA "Kvant", A.F.Ioffe PTI, Leningrad 1990, 34 pp. (in Russian).80. G.A.Medvedkin, V.Yu.Rud, M.V.Yakushev, Diode n-p CuInSe2 structures fabricated by oxygen implantation. - Cryst.Res.Technol. 1990, v.25, No.11, pp.1299-302.
81. G.A.Medvedkin, M.A.Magomedov, M.V.Yakushev, Heterojunction formation and properties in CuInSe2-Oxygen system. - Proceed. 8th Intern. Confer. on ternary and multinary compounds, Kishinev, Moldova, Shtiintsa Press 1990, vol.I, p.253-6 (Abst. p.270).
82. G.A.Medvedkin, Yu.V.Rud, Photoelectric anisotropy of II-IV-V2 ternary semiconductors. - Ibid. p.48.
83. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, The anisotropy of the optical band edge absorption in compensated n-CdGeP2 crystals. - Sov.Phys.Semicond. 1990, v.24, No.7, pp.1306-12.
84. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Yu.K.Undalov, Photoelectric properties of structures based on CdGeP2 and its binary analog InP. - Sov.Phys.Tech.Phys. 1990, v.60, No.9, pp.174-6.
85. M.A.Magomedov, G.A.Medvedkin, I.K.Polushina, Yu.V.Rud, Preparation and electrical properties of thin layers of copper-indium diselenide. - 3rd All-Union Confer. "Chalcogenide semiconductor materials science", Chernovtsy, Ukraine, Chernovtsy State University 1991, v.I, p.33.
86. G.A.Medvedkin, Yu.V.Rud, Semiconductor photodetectors for linearly polarized radiation. - 2nd All-Union Confer. "Photoelectric phenomena in semiconductors", Ashkhabad, Ylym 1991, pp.4-5.
87. Yu.V.Rud, M.A.Magomedov, G.A.Medvedkin, The growth method for CuInSe2 films. - USSR Author's Certificate No.1807531, 7 Feb. 1991, Bull.1993, No.13 (in Russian).
88. T.L.Makarova, G.A.Medvedkin, The refractive index dispersion of CdSnP2 and CdSiAs2 crystals in the visible range. - Semicond.Sci.Technol. 1992, v.7, pp.278-80.
89. M.A.Magomedov, G.A.Medvedkin, V.Yu.Rud, Yu.V.Rud, Preparation and properties of isotypical heterostructures based on n-CuInSe2. - Sov.Phys.Semicond. 1992, v.26, No.3, pp.556-8.
90. M.A.Magomedov, G.A.Medvedkin, I.K.Polushina, Yu.V.Rud, Charge carrier concentration in films of copper-indium diselenide. - Inorganic Materials 1992, v.28, No.3, pp.679-81.
91. G.A.Medvedkin, Yu.V.Rud, M.A.Tairov, Semiconductor crystals for photosensors of linearly polarized radiation (Monograph), Tashkent, FAN 1992, 296 pp. (in Russian).
92. V.D.Prochukhan, G.A.Medvedkin, Yu.V.Rud (principal investigators), et al, Development of thin-film photoconverters of solar radiation based on II-VI and CuInSe2 compounds. - Governmental Order, Report to A.F.Ioffe PTI, St.Petersburg 1993, 61 pp. (in Russian).
93. G.A.Medvedkin (principal investigator), et al, Investigating techniques to prepare multilayer thin-film structures for solar cells based on ternary compounds. - Contract No.175/535-193, Report to CRI "Electron", A.F.Ioffe PTI, St.Petersburg 1993, 23 pp. (in Russian).
94. G.A.Medvedkin (principal investigator), et al, The development of a technological process for preparing thin-film photoelectroconverters on A2B6 and CuInSe2-type compounds. - Governmental Order for year 1993 (1E34-Solar energetics), Abstract to the Ioffe PTI report, St.Petersburg 1993, 1 p. (in Russian).
95. G.A.Medvedkin, M.A.Magomedov, Growth of polycrystalline CuInSe2 thin films by effusion evaporation. - Semicond.Sci.Technol. 1993, v.8, pp.652-6.
96. G.A.Medvedkin, M.A.Magomedov, Mass Transfer and film growth in effusion evaporation of CuInSe2 - Jap. Soc. of Appl. Phys. 1993, p.29 (9th Intern. Confer. on Ternary and Multinary Compounds, Yokohama Japan, August 1993, Abst. 9pP12).
97. V.V.Kindyak, A.S.Kindyak, V.F.Gremenok, I.V.Bodnar, Yu.V.Rud, G.A.Medvedkin, Optical constants of laser-deposited CuGaSe2 films near the fundamental absorption edge. - Semiconductors 1993, v.27(7), pp.636-7.
98. G.A.Medvedkin, Anisotropy of optical and photoelectric properties of ternary diamond-like semiconductors. - Doctoral Thesis (Doctor of Sciences), A.F.Ioffe Physico-Technical Institute, St.Petersburg 1993, 34 pp. (in Russian).
99. M.E.Boiko, G.A.Medvedkin, Thermal oxidation of CuInSe2: Experiment and physico-chemical model. - 1st World Confer. on Photovoltaic Energy Conversion, Hawaii, USA 1994, IEEE 1995, pp.258-61.
100. V.V.Kindyak, A.S.Kindyak, V.F.Gremenok, I.V.Bodnar, Yu.V.Rud, G.A.Medvedkin, Optical properties of laser-evaporated CuGaSe2 films near and above the fundamental absorption edge. - Thin Solid Films 1994, v.250, No.1-2, pp.33-6.
1995-1999 101. G.A.Medvedkin, M.V.Yakushev, A.E.Hill, R.D.Pilkington, R.D.Tomlinson, The thermal and implantation interaction of oxygen with CuInSe2 crystals. - Cryst. Res. Technol. 1996, v.31, S1, pp.209-12. (10th Intern. Confer. on Ternary and Multinary Compounds, Stuttgart, Germany, 1995, Abst. 10A2).102. G.A.Medvedkin, I.K.Polushina, Vacuum effusion evaporation of CuInSe2 and a model of small nuclei. - Cryst. Res. Technol. 1996, v.31, S2, pp.493-6. (Ibid. Abst. POI47).
103. M.E.Boiko, G.A.Medvedkin, Thermal oxidation of CuInSe2: Experiment and physico-chemical model. - Solar Energy Mater. and Solar Cells, 1996, No.41/42, pp.307-14.
104. M.V.Yakushev, G.A.Medvedkin, R.D.Tomlinson, A.E.Hill, R.D.Pilkington, Rutherford backscattering and nuclear reaction study of air annealed CuInSe2 single crystals. - Inst. Phys. Conf. Ser. #155: 1997, Chapter 12, pp.897-900. (23rd Intern. Symp. on Compound Semiconductors, St.Petersburg, Russia, 1996, p.53).
105. S.G.Konnikov, G.A.Medvedkin, M.M.Sobolev, S.A.Solovjev, Cathodoluminescence of p-n-p microstructures in CuInSe2 crystals. - Semiconductors 1997, vol.31 (1), pp.92-6.
106. G.A.Medvedkin, S.G.Konnikov, S.A.Solovjev, P-n and p-n-p junction arrays in CuInSe2: electron beam stimulated radiation study. - 14th European Photovoltaic Solar Energy Confer. & Exhibition, Barselona Spain, 1997, Session: Thin Film Cell and Technologies, Book of abstracts: P4B.18.
107. G.A.Medvedkin, M.A.Magomedov, Extrinsic photoresponse and photoluminescence of CuInSe2 crystal grown with a deviation from valence stoichiometry. - Journ. Appl. Phys. 1997, v. 82(8), pp. 4013-19.
108. G.A.Medvedkin, M.M.Sobolev, S.A.Solovjev, P-n and p-n-p junction arrays in CuInSe2 crystals: Cathodoluminescence and capacitance study. - Journ. Appl. Phys. 1997, v. 82(10), pp. 5167-75.
109. G.A.Medvedkin, E.N.Shvets, M.M.Sobolev, S.A.Solovjev, Point defect study of hemispheric p-n-p microstructures in CuInSe2 single crystals. - Inst. Phys. Conf. Ser. No.152: Section E: Surfaces and Interfaces, 1998, IOP Publishing Ltd., pp.745-8. (11th Intern. Confer. on Ternary & Multinary Compounds, Salford, UK, 1997, Abst. A5.3).
110. Gennadiy A.Medvedkin, Photovoltaic properties of In2O3/CuInSe2 heterostructures prepared by the method of thermal oxidation. - Inst. Phys. Conf. Ser. No.152: Section H: Single Crystal and Thin Film Devices, 1998, IOP Publishing Ltd., pp.951-4. (11th Intern. Confer. on Ternary & Multinary Compounds, Salford, UK, 1997, Abst. P2.68).
111. G.A.Medvedkin, J.Wennerberg, Laser beam induced current characterization of high efficiency CIS and CIGS solar cells. – Polycrystalline Semiconductors V - Bulk Materials, Thin Films and Devices in Series 'Solid State Phenomena' , Scitech Publ. Uettikon am See, Switzerland 1999, pp.69-74 (Intern. Confer. “POLYSE’98”, 1998, Schwabisch Gmund, Germany, Abst. O4).
112. G.A.Medvedkin, M.A.Magomedov, Polycrystalline bulk CuInSe2 with a deviation from valence stoichiometry. – Polycrystalline Semiconductors V - Bulk Materials, Thin Films and Devices in Series 'Solid State Phenomena' , Scitech Publ. Uettikon am See, Switzerland 1999, pp.258-62 (Intern. Confer. “POLYSE’98”, 1998, Schwabisch Gmund, Germany, Abst. O37).
113. G.A.Medvedkin, L.Stolt, J.Wennerberg, Optoelectronic Image of polycrystalline thin film solar cells based on CuInSe2 and CuInGaSe2 by the laser beam scan. – Int. Jubilee Conf. “Physics at the turn of the 21st century”, 1998, St Petersburg, Russia, Summaries C20p, p.98.
114. G.A. Medvedkin, Thin-film polycrystalline solar cells on ternary semiconductors. – Intern. Workshop on Optoelectronics (25 year Anniversary of Optoelectronic Dept. at Electrical Eng. Univ. – St Petersburg, Russia), 1998, Abst. p.15.
115. G.A. Medvedkin, L. Stolt, J. Wennerberg, Optoelectronic Images of polycrystalline thin film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning. – Semiconductors 1999, v. 33 (9), pp. 1037-9.
116. G.A. Medvedkin, J. Wennerberg, Computer modeling and visualization of hidden defects in thin film solar cells on CuInSe2 and Cu(In,Ga)Se2. - Jpn. J. Appl. Phys. 2000, vol.39, Suppl. 39-1, pp. 345-6 (12th Int. Conf. on Ternary and Multinary Compounds, 2000, Hsinchu Taiwan, Abst. P2-36).
117. G.A. Medvedkin, Optical sensors sensitive to the light polarization: Phenomenological consideration through electronic parameters. – Jpn. J. Appl. Phys. 2000, vol.39, Suppl. 39-1, pp. 355-6 (12th Int. Conf. on Ternary and Multinary Compounds, 2000, Hsinchu Taiwan, Abst. We-B2-4).
118. G.A. Medvedkin, T. Nishi, K. Sato, Exciton photoluminescence from CdSnP2 single crystals. – Extended Abstracts of 47th Spring Meeting, 2000 by Japan Society of Applied Physics, Tokyo Japan, 2000, No.3, Sec. Semiconductors (non-silicon), p.1372.
119. G.A. Medvedkin, Effect of the diffusion length and the surface recombination rate on photopleochroism of anisotropic crystals. – Semiconductors, 2000, vol. 34 (5), pp. 533-6.
120. G.A. Medvedkin, Effect of the diffusion length and the surface recombination rate on the polarization quantum efficiency of anisotropic crystals. - Semiconductors, 2000, vol.34 (5), pp.537-40.
122. K. Sato, G.A. Medvedkin, T. Ishibashi, T. Nishi, K. Yonemitsu, K. Hirose, Magnetization effect in Mn-CdGeP2 quaternary system. – 24th Annual Conf. of Magnetic Society of Japan, 2000, Shinjuku, Tokyo, Japan; J. Magn. Soc. Jpn. 2001, vol.25, No.4-2, pp. 735-8. (in Japanese).
124. G.A. Medvedkin, T. Nishi, K. Sato, Photoluminescence of CdSnP2 single crystals in the vicinity of the fundamental optical edge. – Jpn. J. Appl. Phys. 2000, vol. 39, No.11, Part 1, pp. 6301-3.
125. K. Sato, G.A. Medvedkin, K. Hayata, Y. Hasegawa, T. Nishi, T. Ishibashi, Magnetic and magneto-optical properties of a novel ferromagnetic semiconductor CdGeP2:Mn. – J. Magn. Soc. Jpn. 2001, vol.25, No.3-2, pp. 283-6 (Proc. MORIS 2000); Magneto-Optical Recording Intern. Symp. and Asia-Pacific Data Storage Conf. (MORIS), 2000, Nagoya Japan, Technical digest (Publication Office joint MORIS/APDSC 2000), pp. 44-45.
126. G.A. Medvedkin, T. Ishibashi, T. Nishi, K. Sato, New magnetic-nonmagnetic semiconductor heterostructure Cd1-xMnxGeP2-CdGeP2. – MRS 2000 Fall Meeting, 2000, Boston Massachusetts, USA, Abstracts I3.2, p.219; Full text e-published by MRS in Proc. Symposium I: Semiconductor spintronics - physics, materials and applications, 6 pp., 2001 ( http://www.mrs.org/meetings/fall2000/esubmission/ )
127.
G.A. Medvedkin, T. Ishibashi, T. Nishi, K. Sato, New magnetic semiconductor Cd1-xMnxGeP2.
– Semiconductors, 2001, v. 35, No.3, pp. 305-9.
128.
K. Sato, G.A. Medvedkin, Y. Hasegawa, T. Ishibashi, K. Yonemitsu, Revealed
ferromagnetic phenomenon in the chalcopyrite semiconductor CdGeP2:Mn. – 8th
Joint MMM-Intermag Conf., 2001, San-Antonio Texas, USA, Abst.
2460.
129.
K. Sato, G.A. Medvedkin, T. Nishi, Y. Hasegawa, R. Misawa, K. Hirose, T. Ishibashi,
Ferromagnetic phenomenon revealed in the chalcopyrite semiconductor CdGeP2:Mn. J.
Appl. Phys. 2001, vol.89 (11), Part 2, pp. 7027-9.
131. K. Sato, G.A. Medvedkin, T. Ishibashi, Room Temperature Ferro Magnetic Semiconductor and its Fabrication. – Application for a Japanese Patent, No. 2000-261367, priority July 7, 2000; World patent WO 02/19352 A1, US PCT Appl. PCT/JP01/07408 of 29.8.2001; Magnetic semiconductor material and Method for preparation thereof, European Patent Appl. 01961155.7 of 3.7.2002, Bull. 23.7.2003.
132. K. Sato, G.A. Medvedkin, T. Ishibashi, Room temperature ferromagnetism in novel DMS CdMnGeP2. – Intern. Conf. on Physics and Application of Spin-related Phenomena in Semiconductors (PASPS 2000), Sendai, Japan, 13-15 Sept. 2000 (Late news).
133. G.A. Medvedkin, K. Hayata, Y. Hasegawa, T. Nishi, T. Ishibashi, K. Sato, Photoluminescence and magneto-optical characterization of a novel diamond-like ferromagnetic semiconductor CdMnGeP2. – Int. Optical Congress “Optics XXI Century”, 2000, St Petersburg, Russia; in Proceed. of the Scientific Youth Workshop “Optics-2000” (Publ. Office of State University for Fine Mechanics and Optics, St Petersburg, Russia), p.45-46, 2000.
134. K. Hirose, T. Ishibashi, G. A. Medvedkin, T. Nishi, K. Sato, Preparation and magnetic properties of polycrystalline CdMnGeP2 solid solution - Extended Abstracts of 48th Spring Meeting, 2001 by Japan Society of Applied Physics, Tokyo, Japan, 2001, No.3, p. 1321, 30a-ZB-1.
135. G. A. Medvedkin, K. Hirose, T. Ishibashi, T. Nishi, K. Sato, V. G. Voevodin, Magnetization effect in ZnGeP2 - Mn chalcopyrite system - Extended Abstracts of 48th Spring Meeting, 2001 by Japan Society of Applied Physics, Tokyo, Japan, 2001, No.3, p. 1321, 30a-ZB-2.
136. T. Nishi, G. A. Medvedkin, K. Sato, H. Miyake, EPR characterization in CuGaSe2 single crystals (II), - Extended Abstracts of 48th Spring Meeting, 2001 by Japan Society of Applied Physics, Tokyo, Japan, 2001, No.3, p. 1394, 28p-YE-5.
137. K. Taguchi, G. A. Medvedkin, T. Ishibashi, T. Nishi, K. Sato, Surface morphology and chemical analysis in depth of FeS2 thin films - Extended Abstracts of 48th Spring Meeting, 2001 by Japan Society of Applied Physics, Tokyo, Japan, 2001, No.3, p. 1416, 29p-YL-3.
138. G. A. Medvedkin, E. I. Terukov, K. Sato, Y. Hasegawa, K. Hirose. Photoluminescent properties of polycrystalline solar cells ZnO/CdS/Cu(In,Ga)Se2 at low temperature, Semiconductors 2001, v. 35, No.11, pp. 1385-90.
139. G. A. Medvedkin, E. I. Terukov, Y. Hasegawa, K. Hirose, K. Sato. Microdefects and point defects optically detected in Cu(In,Ga)Se2 thin film solar cells exposed to the damp and heating. – Solar Ener. Mater. & Solar Cells 2002, v. 75, pp. 127-133; (Int. PVSEC-12, Jeju, Korea 2001, Technical Digest, p. 501-2).
140. G. A. Medvedkin, T. Nishi, Y. Katsumata, K. Sato, H. Miyake, Study of Point Defects in CuGaSe2 Single Crystals by Means of Electron Paramagnetic Resonance and Photoluminescence. – Solar Ener. Mater. & Solar Cells 2002, v. 75, pp. 134-143; (Int. PVSEC-12, Jeju, Korea 2001, Technical Digest, p. 503-4).
141. G. A. Medvedkin, K. Hirose, T. Ishibashi, T. Nishi, V. G. Voevodin, K. Sato, New magnetic materials in ZnGeP2-Mn chalcopyrite system. J. Cryst. Growth 2002, v. 236, pp. 609-12 (Int. Conf. On Crystal Growth ICCG-13/ICVGE-11, Kyoto Japan, 2001, Abstract 31p-S11-03, p. 73).
142. Katsuaki Sato, Gennadiy A. Medvedkin, Takayuki Ishibashi, Kanta Hirose, Room temperature ferromagnetism in the novel magnetic semiconductor based on the chalcopyrite compounds (INVITED). J. Cryst. Growth 2002, v. 237-239, 1363-9 (Int. Conf. On Crystal Growth ICCG-13/ICVGE-11, Kyoto Japan, Abstract 31p-S11-01, p. 72).
143. K. Hirose, G. A. Medvedkin, T. Ishibashi, T. Nishi, K. Sato, Growth of (Cd,Mn)GeP2 ferromagnetic semiconductor. J. Cryst. Growth 2002, v. 237-239, pp. 1370-3 (Int. Conf. On Crystal Growth ICCG-13/ICVGE-11, Kyoto Japan, 2001, Abstract 31p-S11-02, p.72).
144.T. Ishibashi, G. A. Medvedkin, K. Yonemitsu, Y. Hasegawa, K. Sato, Preparation and characterization of magnetic semiconductor Zn1-xMnxGeP2 (I). Extended Abstracts of 62nd Autumn Meeting, 2001 by Japan Soc. Appl. Physics, Sendai Japan, Sept. 11-14, 2001, No.3, p. 1013, 11a-YA-7.
145. K. Sato, G. A. Medvedkin, M. Hosoba, S. Mitani, K. Takanashi, Preparation and characterization of magnetic semiconductor Zn1-xMnxGeP2 (II). Extended Abstracts of 62nd Autumn Meeting, 2001 by Japan Soc. Appl. Physics, Sendai Japan, Sept. 11-14, 2001, No.3, p. 1013, 11a-YA-8.
146. G.A. Medvedkin, Multivalent substitution in quasibinary Ga1-x(II-Mn-IV)xAs solid solution. Russian J. Appl. Phys. Letters, 2002, v.28 (21), pp. 22-28.
147. P.G. Baranov, S.I. Goloshchapov, G.A. Medvedkin, T. Ishibashi, K. Sato, Magnetic Resonance in ZnGeP2 and (Zn,Mn)GeP2. J. Superconductivity: Incorporating Novel Magnetism 2003, v.16 (1), 131-3; (2nd Int. Conf. Physics and Application of Spin Related Phenomena in Semiconductors, Wuerzburg Germany, July 23-26, 2002, Abstract PII 13).
148. G.A. Medvedkin, Engineering of Ternary Ferromagnetic Semiconductors in Heterojunctions, J. Superconductivity: Incorporating Novel Magnetism 2003, v.16 (1), 135-7; (2nd Int. Conf. Physics and Application of Spin Related Phenomena in Semiconductors, Wuerzburg Germany, July 23-26, 2002, Abstract PII 14).
149. K. Sato, G.A. Medvedkin, T. Ishibashi, S. Mitani, K. Takanashi, Y. Ishida, D.D. Sarma, J. Okabayashi, A. Fujimori, T. Kamatani, H. Akai, Novel Mn-doped Chalcopyrites (INVITED). J. Phys. Chem. Solids, v.64 (9-10), 1461-1468, 2003; (ICTMC13, Oct. 14-18, 2002, Paris France, Abst. O2-3).
150. G.A. Medvedkin, P.G. Baranov, S.I. Goloshchapov, Ferromagnetic properties of (Zn,Mn,Ge)P2 layers on diamagnetic ZnGeP2 single crystal substrates. J. Phys. Chem. Solids, v.64 (9-10), 1691-5, 2003; ICTMC13, 2002, Paris France, Abst.P1-9.
151. Y. Ishida, D.D. Sarma, K. Okazaki, J. Okabayashi, A. Fujimori, G.A. Medvedkin, T. Ishibashi, K. Sato, In-situ Photoemission Study of the Room-temperature Ferromagnetic Semiconductor ZnGeP2:Mn. - ICTMC13, Oct. 14-18, 2002, Paris France, Abst. P1-11.
152. T. Ishibashi, H. Yuasa, J. Jogo, G.A. Medvedkin, K. Sato, CdGeP2:Mn Thin Films Growth by Metal-Organic Molecular Beam Epitaxy Method. 13th Int. Conf. on Ternary and Multinary Compounds - ICTMC13, Oct. 14-18, 2002, Paris France, Abst. P1-12.
153. K. Sato, T. Ishibashi, H. Takagi, P.G. Baranov, G.A. Medvedkin, T. Kamatani and H. Akai: Role of Point Defects in Novel Chalcopyrite Magnetic Semiconductors (Poster) - The 1st Int. Symp. on Point Defect and Nonstoichiometry in Semiconductors (ISPN 2003), Japan Sendai, March 20-22, 2003.
154. P.G. Baranov, S.I. Goloshchapov, G.A. Medvedkin, V.G. Voevodin, Detection of magnetic resonance signals with anomalous dispersion and two types of isolated manganese centers in the chalcopyrite crystal (Zn,Mn)GeP2, JETP Letters, v.77 (10), 582-586, 2003.
155. G. A. Medvedkin, V. M. Smirnov, H. Yuasa, T. Nagatsuka, T. Ishibashi,K. Sato, Preparation by the method of molecular-beam epitaxy and investigation of CdGeP2 layers, Int. Seminar on optoelectronics, St Petersburg, Russia, November, p. 75-77 (2003).
156. G.A. Medvedkin, S.I. Goloshchapov, V.G. Voevodin, K. Sato, T. Ishibashi, S. Mitani, K. Takanashi, Y. Ishida, D.D. Sarma, J. Okabayashi, A. Fujimori, T. Kamatani, H. Akai, Novel spintronic materials based on ferromagnetic semiconductor chalcopyrites, Proceed. 11th Int. Symp. “Nanostructures: Physics and Technology”, St Petersburg, Russia, June 23-28, 2003, 319-321, 2003.
157. Y. Ishida, D.D. Sarma, K. Okazaki, J. Okabayashi, J.I. Hwang, H. Ott, A. Fujimori, G.A. Medvedkin, T. Ishibashi, K. Sato, In-situ photoemission study of the room-temperature ferromagnet ZnGeP2:Mn, Phys. Rev. Lett. v.91 (10), 107202, 2003.
158. P.G. Baranov, S.I. Goloshchapov, G.A. Medvedkin, S.B. Orlinskii, V.G. Voevodin, Magnetic resonance of Mn-related isolated centers and clusters in chalcopyrite crystal of (Zn,Mn)GeP2, Physica B, v.09, 211, 2003; (Int. Conf. on Defects in Semiconductors, ICDS-22, Arhus Denmark, July 28-August 1, 2003, Abst. OL4) .
159. G.A. Medvedkin, S.I. Goloshchapov, V.G. Voevodin, K. Sato, T. Ishibashi, S. Mitani, K. Takanashi, Y. Ishida, J. Okabayashi, A. Fujimori, D. D. Sarma, T. Kamatani, H. Akai, Novel spintronic materials based on ferromagnetic semiconductor chalcopyrite, Int J. Nanosci., 3 #1-2, 39-50 (2004).
160. P.G. Baranov, S.I. Goloshchapov, G.A. Medvedkin, V.G. Voevodin, S.B. Orlinskii, J. Schmidt, Giant electron spin echo of ferroamnetic ordered nano-clusters in (Zn,Mn)GeP2 crystals, 12th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, June 21-25, p. 28-29 (2004).
161. V.V. Popov, G.A. Medvedkin, Anomalies of kinetic effects in high temperature ferromagnet (Zn,Mn)GeP2, XIX Int. Workshop “New magnetic materials in microelectronics”, Moscow, Moscow State University, June 28-July 2, 2004, p. 366-368 (2004).
162. V. M. Smirnov, K. Minami, H. Yuasa, J. Jogo, T. Nagatsuka, G. A. Medvedkin, T. Ishibashi, K. Sato, MBE growth of CdGeP2 epitaxial layers and a study of their properties, Int. Conf. On Crystal Growth, Grenoble France, 9-13 August, 2004, T02, 0346 (2004).
163. V.V. Popov, G.A. Medvedkin, Hole transport anomaly in high TC ferromagnet (Zn,Mn)GeP2, Solid St Commun. 132 (8), p. 561-565 (2004).
164. G. A. Medvedkin, V. M. Smirnov, T. Ishibashi, K. Sato, Photoluminescence of CdGeP2 and (Cd,Mn)GeP2, 14th Int. Conf. on Ternary and Multinary Compounds, ICTMC-14, Sept. 27-Oct.1, 2004, Denver CO, USA.